Part Number Hot Search : 
LXXXNC UPC2260V SMA6863 CXD2540Q HL11W ELM611DA 25N15BH D45VH10
Product Description
Full Text Search
 

To Download TDA8950 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 TDA8950
2 x 150 W class-D power amplifier
Rev. 01 -- 9 September 2008 Preliminary data sheet
1. General description
The TDA8950 is a high efficiency class-D audio power amplifier. The typical output power is 2 x 150 W with a speaker load impedance of 4 . The TDA8950 is available in the HSOP24 power package and DBS23P power package. The amplifier operates over a wide supply voltage range from 12.5 V to 40 V and consumes a low quiescent current.
2. Features
I Pin compatible with TDA8920B for both HSOP24 and DBS23P packages I Symmetrical high operating supply voltage range from 12.5 V to 40 V I Stereo full differential inputs, usable as stereo Single-Ended (SE) or mono Bridge-Tied Load (BTL) amplifier I High output power at typical applications: N SE 2 x 150 W, RL = 4 (VP = 37 V) N SE 2 x 170 W, RL = 4 (VP = 39 V) N SE 2 x 100 W, RL = 6 (VP = 37 V) N BTL 1 x 300 W, RL = 8 (VP = 37 V) I Low noise in BTL due to BD-modulation I Smooth pop noise-free start-up and switch down I Zero dead time Pulse Width Modulation (PWM) output switching I Fixed frequency I Internal or external clock switching frequency I High efficiency I Low quiescent current I Advanced protection strategy: voltage protection and output current limiting I Thermal foldback I Fixed gain of 30 dB in SE and 36 dB in BTL I Full short-circuit proof across load
3. Applications
I I I I DVD Mini and micro receiver Home Theater In A Box (HTIAB) system High power speaker system
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
4. Quick reference data
Table 1. Quick reference data Conditions Min Typ Max 40 90 75 Unit V V mA Symbol Parameter General, VP = 35 V VP VP(ovp) Iq(tot) supply voltage overvoltage protection supply voltage total quiescent current non-operating; VDD - VSS Operating mode; no load; no filter; no RC-snubber network connected RL = 4 ; THD = 10 %; VP = 39 V RL = 4 ; THD = 10 %; VP = 37 V RL = 6 ; THD = 10 %; VP = 37 V Mono bridge-tied load configuration Po output power RL = 8 ; THD = 10 %; VP = 37 V 300 W 12.5 35 85 50
Stereo single-ended configuration Po output power 170 150 100 W W W
5. Ordering information
Table 2. Ordering information Package Name TDA8950J TDA8950TH DBS23P HSOP24 Description plastic, heatsink small outline package; 24 leads; low stand-off height Version SOT566-3 plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 Type number
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
2 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
6. Block diagram
VDDA
3 (20)
n.c.
10 (4)
STABI PROT 18 (12) 13 (7)
VDDP2
23 (16)
VDDP1
14 (8) 15 (9)
BOOT1
IN1M IN1P
9 (3) 8 (2) INPUT STAGE PWM MODULATOR SWITCH1 CONTROL AND HANDSHAKE DRIVER HIGH 16 (10) DRIVER LOW VSSP1 OSCILLATOR MODE MANAGER TEMPERATURE SENSOR CURRENT PROTECTION VOLTAGE PROTECTION OUT1
n.c. OSC MODE
11 (5) 7 (1) 6 (23)
mute STABI
TDA8950TH (TDA8950J)
VDDP2 22 (15) BOOT2
SGND
2 (19) mute CONTROL SWITCH2 AND HANDSHAKE DRIVER HIGH 21 (14) DRIVER LOW 17 (11) 20 (13) OUT2
IN2P IN2M
5 (22) 4 (21) INPUT STAGE PWM MODULATOR
1 (18)
12 (6)
24 (17)
19 (-)
001aah653
VSSA
n.c.
VSSD
n.c.
VSSP1
VSSP2
The pin numbers in parenthesis refer to type number TDA8950J.
Fig 1.
Block diagram
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
3 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
7. Pinning information
7.1 Pinning
OSC IN1P IN1M n.c. n.c. n.c. PROT VDDP1 BOOT1
1 2 3 4 5 6 7 8 9
OUT1 10 VSSP1 11 VSSD 24 VDDP2 23 BOOT2 22 OUT2 21 VSSP2 20 n.c. 19 STABI 18 VSSP1 17 OUT1 16 BOOT1 15 VDDP1 14 PROT 13
001aah654
1 2 3 4 5
VSSA SGND VDDA IN2M IN2P MODE OSC IN1P IN1M
STABI 12 VSSP2 13 OUT2 14 BOOT2 15 VDDP2 16 VSSD 17 VSSA 18 SGND 19 VDDA 20 IN2M 21 IN2P 22 MODE 23
TDA8950J
TDA8950TH
6 7 8 9
10 n.c. 11 n.c. 12 n.c.
001aah655
Fig 2.
Pin configuration TDA8950TH
Fig 3.
Pin configuration TDA8950J
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
4 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
7.2 Pin description
Table 3. Symbol VSSA SGND VDDA IN2M IN2P MODE OSC IN1P IN1M n.c. n.c. n.c. PROT VDDP1 BOOT1 OUT1 VSSP1 STABI n.c. VSSP2 OUT2 BOOT2 VDDP2 VSSD Pin description Pin TDA8950TH TDA8950J 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 18 19 20 21 22 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 negative analog supply voltage signal ground positive analog supply voltage negative audio input for channel 2 positive audio input for channel 2 mode selection input: Standby, Mute or Operating mode oscillator frequency adjustment or tracking input positive audio input for channel 1 negative audio input for channel 1 not connected not connected not connected decoupling capacitor for protection (OCP) positive power supply voltage for channel 1 bootstrap capacitor for channel 1 PWM output from channel 1 negative power supply voltage for channel 1 decoupling of internal stabilizer for logic supply not connected negative power supply voltage for channel 2 PWM output from channel 2 bootstrap capacitor for channel 2 positive power supply voltage for channel 2 negative digital supply voltage Description
8. Functional description
8.1 General
The TDA8950 is a two-channel audio power amplifier using class-D technology. The audio input signal is converted into a digital pulse width modulated signal via an analog input stage and PWM modulator, see Figure 1. To enable the output power transistors to be driven, this digital PWM signal is applied to a control and handshake block and driver circuits for both the high side and low side. In this way a level shift is performed from the low power digital PWM signal (at logic levels) to a high power PWM signal that switches between the main supply lines. A 2nd-order low-pass filter converts the PWM signal to an analog audio signal across the loudspeakers.
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
5 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
The TDA8950 one-chip class-D amplifier contains high power switches, drivers, timing and handshaking between the power switches and some control logic. Also an advanced protection strategy is implemented which contains several voltage protections, temperature protections and a maximum current protection to secure maximum system robustness. The two audio channels of the TDA8950 each contain a PWM modulator, an analog feedback loop and a differential input stage. It also contains circuits common to both channels such as the oscillator, all reference sources, the mode interface and a digital timing manager. The TDA8950 contains two independent amplifier channels with high output power, high efficiency, low distortion and low quiescent current. The amplifier channels can be connected in the following configurations:
* Mono Bridge-Tied Load (BTL) amplifier * Stereo Single-Ended (SE) amplifiers
The amplifier system can be switched to one of three operating modes by pin MODE:
* Standby mode; with a very low supply current * Mute mode; the amplifiers are operational, but the audio signal at the output is
suppressed by disabling the VI-converter input stages
* Operating mode; the amplifiers are fully operational
To ensure pop noise-free start-up, the DC output offset voltage is applied gradually to the output at a level between Mute mode and Operating mode levels. The bias current setting of the VI converters is related to the voltage on pin MODE; in Mute mode the bias current setting of the VI converters is zero (VI converters disabled) and in Operating mode the bias current is at maximum. The time constant required to apply the DC output offset voltage gradually between Mute and Operating mode levels can be generated via an RC-network on pin MODE. An example of a switching circuit for driving pin MODE is illustrated in Figure 4. If the capacitor C is left out of the application, the voltage on pin MODE will be applied with a much smaller time-constant, which might result in audible pop noises during start-up (depending on DC output offset voltage and loudspeaker used).
+5 V standby/ mute R MODE pin R C mute/on SGND
001aab172
Fig 4.
Example of mode selection circuit
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
6 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
In order to fully charge the coupling capacitors at the inputs, the amplifier will remain automatically in the Mute mode before switching to the Operating mode. A complete overview of the start-up timing is given in Figure 5.
audio output
(1)
modulated PWM VMODE 50 % duty cycle operating
> 4.2 V
2.2 V < VMODE < 3 V
mute
0 V (SGND)
standby 100 ms 50 ms
> 350 ms
time
audio output
(1)
modulated PWM VMODE 50 % duty cycle operating
> 4.2 V
2.2 V < VMODE < 3 V
mute
0 V (SGND)
standby 100 ms 50 ms
> 350 ms
time
001aah657
(1) First 14 pulse down. Upper diagram: When switching from standby to mute, there is a delay of approximately 100 ms before the output starts switching. The audio signal is available after VMODE has been set to operating, but not earlier than 150 ms after switching to mute. For pop noise-free start-up it is recommended that the time constant applied to pin MODE is at least 350 ms for the transition between mute and operating. Lower diagram: When switching directly from standby to operating, there is a first delay of 100 ms before the outputs starts switching. The audio signal is available after a second delay of 50 ms. For pop noise-free start-up it is recommended that the time constant applied to pin MODE is at least 500 ms for the transition between standby and operating.
Fig 5.
Timing on mode selection input
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
7 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
8.2 Pulse width modulation frequency
The output signal of the amplifier is a PWM signal with a carrier frequency that typically lies between 300 kHz and 400 kHz. Using a 2nd-order LC demodulation filter in the application results in an analog audio signal across the loudspeaker. The carrier frequency is determined by an external resistor ROSC, connected between pin OSC and pin VSSA. An optimal setting for the carrier frequency is between 300 kHz and 400 kHz. Using an external resistor of 30 k on pin OSC, the carrier frequency is set to 345 kHz. For more details see Table 8. If two or more class-D amplifiers are used in the same audio application, it is recommended that all devices operate at the same switching frequency by using an external clock circuit. Due to an internal clock divider:
* The external applied clock frequency must have the double frequency of the output
PWM frequency.
* The duty cycle of the external clock is not critical for product performance. 8.3 Protections
The following protections are included in TDA8950:
* Thermal protections:
- Thermal FoldBack (TFB) - OverTemperature Protection (OTP)
* OverCurrent Protection (OCP, diagnostic via pin PROT) * Window Protection (WP) * Supply voltage protections:
- UnderVoltage Protection (UVP) - OverVoltage Protection (OVP) - UnBalance Protection (UBP) The reaction of the device to the different fault conditions differs per protection.
8.3.1 Thermal protection
In the TDA8950 an advanced thermal protection strategy is implemented. It consists of a TFB function that gradually reduces the out put power within a certain temperature range. When temperature is still rising an OTP is implemented which shuts down the device completely. 8.3.1.1 Thermal FoldBack (TFB) If the junction temperature Tj exceeds a defined threshold value, the gain is gradually reduced. This will result in a smaller output signal and less dissipation. Eventually the temperature will stabilize.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
8 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
TFB is specified at the temperature value Tact(th_fold) where the closed loop voltage gain is reduced with 6 dB. The range of the TFB is: Tact(th_fold) - 5 C < Tact(th_fold) < Tact(th_prot). For the TDA8950 the value of Tact(th_fold) is about +153 C. For more details see: Table 7. 8.3.1.2 OverTemperature Protection (OTP) If, despite the TFB function, the junction temperature Tj of the TDA8950 continues rising and exceeds the threshold Tact(th_prot) the amplifier will shutdown immediately. The amplifier resumes switching approximately 100 ms after the temperature drops below Tact(th_prot). In Figure 6 the thermal behavior is visualized.
Gain (dB)
30 dB
24 dB
0 dB
(Tact(th_fold) - 5C)
Tact(th_prot) Tact(th_fold) 2 3
Tj (C)
1
001aah656
(1) Duty cycle of PWM output modulated according audio input signal. (2) Duty cycle of PWM output reduced due to TFB. (3) Amplifier is switched off due to OTP.
Fig 6.
Behavior of TFB and OTP
8.3.2 OverCurrent Protection (OCP)
If a short-circuit is applied to one of the demodulated outputs of the amplifier, the OCP will detect this. If the output current exceeds the maximum of 9.2 A, it is automatically limited to its maximum value by the OCP protection circuit. The amplifier outputs remain switching (the amplifier is NOT shut-down completely). If the active current limiting continues longer than time , the TDA8950 shuts down. Activation of current limiting and the triggering of the OCP are observed at pin PROT. The amplifier can distinguish between an impedance drop of the loudspeaker and a low-ohmic short-circuit across the load. In the TDA8950 the impedance threshold (Zth) depends on the supply voltage used. When a short-circuit is made across the load, causing the impedance to drop below the threshold level (TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
9 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
Should there be an impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same protection will be activated. The maximum output current will again be limited to 9.2 A, but the amplifier will not switch-off completely (thus preventing audio holes from occurring). The result will be a clipping output signal. See Section 13.7 for more information on this maximum output current limiting feature.
8.3.3 Window Protection (WP)
The WP checks the conditions at the output terminals of the power stage and is activated:
* During the start-up sequence, when pin MODE is switched from standby to mute. In
the event of a short-circuit at one of the output terminals to pin VDDPn or pin VSSPn the start-up procedure is interrupted and the TDA8950 waits until the short-circuit to the supply lines has been removed. Because the test is done before enabling the power stages, no large currents will flow in an event of short-circuit.
* When the amplifier is completely shut-down due to activation of the OCP because a
short-circuit to one of the supply lines is made, then during restart (after 100 ms) the WP will be activated. As a result the amplifier will not start-up until the short-circuit to the supply lines is removed.
8.3.4 Supply voltage protections
If the supply voltage drops below minimum supply voltage, the UVP circuit is activated and the system will shutdown correctly. If the internal clock is used, this switch-off will be silent and without pop noise. When the supply voltage rises above the threshold level, the system is restarted again after 100 ms. If the supply voltage exceeds maximum supply voltage, the OVP circuit is activated and the power stages will shutdown. When the supply voltage drops below the threshold level, the system is restarted again after 100 ms. An additional UBP circuit compares the positive analog (voltage on pin VDDA) and the negative analog (voltage on pin VSSA) supply voltage and is triggered if the voltage difference exceeds a factor of two. When the supply voltage difference drops below the threshold level, the system is restarted again after 100 ms. Example: With a symmetrical supply of 30 V, the protection circuit will be triggered if the unbalance exceeds approximately 15 V. See Section 13.7. In Table 4 an overview is given of all protections and their respective effects on the output signal.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
10 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
Overview of TDA8950 protections Restart directly N N N[2] Y N N N Restart after 100 ms N Y Y[2] N Y Y Y Pin PROT detection N N Y N N N N
Table 4.
Protection name Complete shutdown TFB[1] OTP OCP WP UVP OVP UBP
[1] [2] [3]
N Y Y[2] N[3] Y Y Y
Amplifier gain will depend on junction temperature and heatsink size. Only complete shutdown of amplifier if short-circuit impedance is below threshold of 1 . In all other cases current limiting results in clipping of the output signal. Fault condition detected during (every) transition between standby-to-mute and during restart after activation of OCP (short-circuit to one of the supply lines).
8.4 Differential audio inputs
For a high common mode rejection ratio and a maximum of flexibility in the application, the audio inputs are fully differential. There are two possibilities:
* For stereo operation it is advised to use the inputs in anti phase and also to connect
the speakers in anti phase (to avoid acoustical phase differences). This construction has several advantages: - The peak current in the power supply is minimized - The supply pumping effect is minimized, especially at low audio frequencies
* For mono BTL operation it is required that the inputs are connected in anti parallel.
The output of one of the channels is inverted and the speaker load is now connected between the two outputs of the TDA8950. In principle the output power to the speaker can be significantly boosted to two times the output power in single ended stereo. The input configuration for a mono BTL application is illustrated in Figure 7.
IN1P IN1M Vin IN2P IN2M
OUT1
SGND
OUT2
power stage
mbl466
Fig 7.
Input configuration for mono BTL application
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
11 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
9. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VP IORM Tstg Tamb Tj VMODE VOSC VI VPROT Vesd supply voltage repetitive peak output current storage temperature ambient temperature junction temperature voltage on pin MODE voltage on pin OSC input voltage referenced to SGND; pin IN1P; IN1M; IN2P and IN2M Human Body Model (HBM); pin VSSP1 with respect to other pins HBM; all other pins Machine Model (MM); all pins Charged Device Model (CDM) Iq(tot) total quiescent current Operating mode; no load; no filter; no RC-snubber network connected referenced to SGND Conditions non-operating mode; VDD - VSS maximum output current limiting Min 9.2 -55 -40 0 0 -5 0 -1800 -2000 -200 -500 Max 90 +150 +85 150 6 Unit V A C C C V
SGND V +6 +5 12 +1800 +2000 +200 +500 75 V V V V V V mA
voltage on pin PROT referenced to voltage on pin VSSD electrostatic discharge voltage
10. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-c) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to case Conditions in free air Typ 40 1.1 Unit K/W K/W
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
12 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
11. Static characteristics
Table 7. Static characteristics VP = 35 V; fosc = 345 kHz; Tamb = 25 C; unless otherwise specified. Symbol Supply VP VP(ovp) VP(uvp) Iq(tot) supply voltage overvoltage protection supply voltage total quiescent current non-operating; VDD - VSS Operating mode; no load; no filter; no RC-snubber network connected undervoltage protection supply voltage VDD - VSS
[1]
Parameter
Conditions
Min 12.5 85 20 -
Typ 35 50
Max 40 90 25 75
Unit V V V mA
Istb VMODE
standby current voltage on pin MODE referenced to SGND Standby mode Mute mode Operating mode
[2] [2][3] [2][3] [2][3]
0 0 2.2 4.2 [2]
480 110 0 9.8
600 6.0 0.8 3.0 6.0 150 15 150 21 210 10.3
A V V V V A V mV mV mV mV V
Mode select input; pin MODE
II VI VO(offset)
input current input voltage output offset voltage
VI = 5.5 V DC input SE; mute SE; operating BTL; mute BTL; operating
[4] [4]
Audio inputs; pins IN1M, IN1P, IN2P and IN2M 9.3 Amplifier outputs; pins OUT1 and OUT2
Stabilizer output; pin STABI VO(STABI) output voltage on pin STABI mute and operating; with respect to VSSP1
Temperature protection Tact(th_prot) Tact(th_fold) thermal protection activation temperature thermal foldback activation temperature closed loop SE voltage gain reduced with 6 dB
[5]
-
154 153
-
C C
[1] [2] [3] [4] [5]
The circuit is DC adjusted at VP = 12.5 V to 42.5 V. With respect to SGND (0 V). The transition between Standby and Mute mode has hysteresis, while the slope of the transition between Mute and Operating mode is determined by the time-constant of the RC-network on pin MODE; see Figure 8. DC output offset voltage is gradually applied to the output during the transition between the Mute and Operating modes. The slope caused by any DC output offset is determined by the time-constant of the RC-network on pin MODE. At a junction temperature of approximately Tact(th_fold) - 5 C the gain reduction will commence and at a junction temperature of approximately Tact(th_prot) the amplifier switches off.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
13 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
slope is directly related to the time-constant of the RC network on the MODE pin
VO (V) VO(offset)(on) Standby Mute On
VO(offset)(mute)
0
0.8
2.2
3.0
4.2 5.5 VMODE (V)
coa021
Fig 8.
Behavior of mode selection pin MODE
12. Dynamic characteristics
12.1 Switching characteristics
Table 8. Dynamic characteristics VP = 35 V; Tamb = 25 C; unless otherwise specified. Symbol Parameter Internal oscillator fosc(typ) fosc VOSC typical oscillator frequency oscillator frequency ROSC = 30.0 k 325 250 345 365 450 kHz kHz Conditions Min Typ Max Unit
External oscillator or frequency tracking voltage on pin OSC SGND + 4.5 SGND + 5 [1]
SGND + 6 V V kHz
Vtrip(OSC) trip voltage on pin OSC ftrack
[1]
SGND + 2.5 450
tracking frequency
250
When using an external oscillator, the fosc(ext) frequency (500 kHz minimum, 900 kHz maximum) will result in a PWM frequency ftrack (250 kHz minimum, 450 kHz maximum) due to the internal clock divider. See Section 8.2.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
14 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
12.2 Stereo and dual SE application characteristics
Table 9. Dynamic characteristics VP = 35 V; RL = 4 ; fi = 1 kHz; fosc = 345 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Po Parameter output power Conditions L = 22 H; C = 680 nF; Tj = 85 C RL = 4 ; THD = 0.5 %; VP = 37 V RL = 4 ; THD = 10 %; VP = 37 V RL = 6 ; THD = 10 %; VP = 37 V RL = 4 ; THD = 10 %; VP = 39 V THD Gv(cl) SVRR total harmonic distortion closed-loop voltage gain supply voltage ripple rejection between pin VDDPn and SGND operating; fi = 100 Hz operating; fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz between pin VSSPn and SGND operating; fi = 100 Hz operating; fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz Zi Vn(o) cs |Gv| mute CMRR po input impedance output noise voltage channel separation voltage gain difference mute attenuation common mode rejection ratio output power efficiency fi = 1 kHz; Vi = 2 V (RMS) Vi(CM) = 1 V (RMS) SE, RL = 4 SE, RL = 6 BTL, RL = 8 RDSon(hs) RDSon(ls)
[1] [2] [3] [4] [5] [6] [7] [8] [9]
[8] [4] [4] [4] [4] [4] [4] [4] [4] [2]
Min [3] [3]
Typ 100 150 100 170
Max Unit W W W W % % dB dB dB dB dB dB dB dB dB k V V dB dB dB dB % % m m
Po = 1 W; fi = 1 kHz Po = 1 W; fi = 6 kHz
29 45 -
0.05 0.05 30 90 70 75 120 80 60 80 115 63 160 85 70 75 75 88 90 88 200 190 31 1 -
between the input pins and SGND operating; Rs = 0 mute
[5] [6] [7]
high-side drain-source on-state resistance low-side drain-source on-state resistance
[9] [9]
-
RsL is the series resistance of inductor of low-pass LC filter in the application. Output power is measured indirectly; based on RDSon measurement. See also Section 13.3. THD is measured in a bandwidth of 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter. Maximum limit is not guaranteed100 % tested. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . Measured independently between VDDPn and SGND and between VSSPn and SGND. B = 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter. B = 22 Hz to 22 kHz, using AES17 20 kHz brickwall filter; independent of Rs. Po = 1 W; Rs = 0 ; fi = 1 kHz. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz. Leads and bond wires included.
(c) NXP B.V. 2008. All rights reserved.
TDA8950_1
Preliminary data sheet
Rev. 01 -- 9 September 2008
15 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
12.3 Mono BTL application characteristics
Table 10. Dynamic characteristics VP = 35 V; RL = 8 ; fi = 1 kHz; fosc = 345 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Parameter Po output power Conditions L = 22 H; C = 680 nF; Tj = 85 C; RL = 8 THD = 10 %; VP = 39 V THD = 10 %; VP = 37 V THD = 0.5 %; VP = 37 V THD Gv(cl) SVRR total harmonic distortion closed-loop voltage gain supply voltage ripple rejection between pin VDDPn and SGND operating; fi = 100 Hz operating; fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz between pin VSSPn and SGND operating; fi = 100 Hz operating; fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz Zi Vn(o) mute CMRR
[1] [2] [3] [4] [5] [6] [7]
[4] [4] [4] [4] [4] [4] [4] [4] [2]
Min
Typ
Max
Unit
[3] [3]
340 300 200 0.05 0.05 36
-
W W W % % dB
Po = 1 W; fi = 1 kHz Po = 1 W; fi = 6 kHz
-
-
80 80 95 120
-
dB dB dB dB
45
75 75 90 130 63 190 45 82 75
-
dB dB dB dB k V V dB dB
input impedance output noise voltage mute attenuation common mode rejection ratio
measured between the input pins and SGND operating; Rs = 0 mute fi = 1 kHz; Vi = 2 V (RMS) Vi(CM) = 1 V (RMS)
[5] [6] [7]
-
RsL is the series resistance of inductor of low-pass LC filter in the application. Output power is measured indirectly; based on RDSon measurement. See also Section 13.3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is guaranteed but may not be 100 % tested. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Low noise due to BD modulation. B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of Rs. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
16 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
13. Application information
13.1 Mono BTL application
When using the power amplifier in a mono BTL application the inputs of both channels must be connected in parallel and the phase of one of the inputs must be inverted (see Figure 7). In principle the loudspeaker can be connected between the outputs of the two single-ended demodulation filters.
13.2 Pin MODE
For pop noise-free start-up, an RC time-constant must be applied on pin MODE. The bias-current setting of the VI-converter input is directly related to the voltage on pin MODE. In turn the bias-current setting of the VI converters is directly related to the DC output offset voltage. Thus a slow dV/dt on pin MODE results in a slow dV/dt for the DC output offset voltage, resulting in pop noise-free start-up. A time-constant of 500 ms is sufficient to guarantee pop noise-free start-up (see also Figure 4, 5 and 8).
13.3 Output power estimation
13.3.1 SE
Maximum output power:
2 RL ---------------------------------------------------- x V P x ( 1 - t min x 0.5 f osc ) R L + R DSon ( hs ) + R sL = --------------------------------------------------------------------------------------------------------------------------------2R L
P o ( 0.5% )
(1)
Maximum current internally limited to 9.2 A: V P x ( 1 - t min x 0.5 f osc ) I o ( peak ) = ------------------------------------------------------------R L + R DSon ( hs ) + R sL Variables: (2)
* * * * * * *
RL: load impedance RsL: series impedance of the filter coil RDSon(hs): high-side RDSon of power stage output DMOS (temperature dependent) fosc: oscillator frequency tmin: minimum pulse width (typical 150 ns, temp. dependent) VP: single-sided supply voltage (or 0.5 x (VDD + |VSS|)) Po(0.5 %): output power at the onset of clipping
Note that Io(peak) should be below 9.2 A (Section 8.3.2). Io(peak)M is the sum of the current through the load and the ripple current. The value of the ripple current is dependent on the coil inductance and voltage drop over the coil.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
17 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
13.3.2 Bridge-Tied Load (BTL)
Maximum output power:
2 RL ----------------------------------------------------------------- x 2V P x ( 1 - t min x 0.5 f osc ) R L + R DSon ( hs ) + R dson ( ls ) = ------------------------------------------------------------------------------------------------------------------------------------------------2R L
P o ( 0.5% )
(3)
Maximum current internally limited to 9.2 A: 2V P x ( 1 - t min x 0.5 f osc ) I o ( peak ) = -----------------------------------------------------------------------------------------R L + ( R DSon ( hs ) + R DSon ( ls ) ) + 2R sL Variables: (4)
* * * * * * * *
RL: load impedance RsL: series impedance of the filter coil RDSon(hs): high-side RDSon of power stage output DMOS (temperature dependent) RDSon(ls): low-side RDSson of power stage output DMOS (temperature. dependent) fosc: oscillator frequency tmin: minimum pulse width (typical 150 ns, temp. dependent) VP: single-sided supply voltage (or 0.5 x (VDD + |VSS|)) Po(0.5 %): output power at the onset of clipping
Note that Io(peak)M should be below 9.2 A (Section 8.3.2). Io(peak) is the sum of the current through the load and the ripple current. The value of the ripple current is dependent on the coil inductance and voltage drop over the coil.
13.4 External clock
For duty cycle independent operation of the device, the external clock input frequency is internally divided by two. This implies that the frequency of the external clock is as twice as high as the internal clock (typical 2 x 345 kHz = 690 kHz). If two or more class-D amplifiers are used it is recommended that all devices run at the same switching frequency. This can be realized by connecting all OCS pins together and feeding them from an external oscillator. When applying an external oscillator, it is necessary to force pin OSC to a DC level above SGND. The internal oscillator is disabled and the PWM modulator will switch with half the externally applied frequency. The internal oscillator requires an external resistor Rext(OSC) and capacitor COSC between pin OSC and PIN VSSA. The noise contribution of the internal oscillator is supply voltage dependent. An external low noise oscillator is recommended for low noise applications running at high supply voltage.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
18 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
13.5 Noise
Noise should be measured using a high order low-pass filter with a cut-off frequency of 20 kHz. The standard audio band pass filters, used in audio analyzers, do not suppress the residue of the carrier frequency sufficiently to ensure a reliable measurement of the audible noise. Noise measurements should preferably be carried out using AES 17 (`brickwall') filters or an audio precision AUX 0025 filter, which was designed specifically for measuring class-D switching amplifiers.
13.6 Heatsink requirements
In many applications it may be necessary to connect an external heatsink to the TDA8950. Equation 5 shows the relationship between the maximum power dissipation, before activation of the TFB, and the total thermal resistance from junction to ambient T j - T amb R th ( j - a ) = ----------------------P diss (5)
Power dissipation (Pdiss) is determined by the efficiency of the TDA8950. The efficiency measured as a function of output power is given in Figure 21. The power dissipation can be derived as a function of output power (Figure 20).
30 P (W)
mbl469
(1)
20
(2)
10
(3) (4) (5)
0 0 20 40 60 80 100 Tamb (C)
(1) Rth(j-a) = 5 K/W. (2) Rth(j-a) = 10 K/W. (3) Rth(j-a) = 15 K/W. (4) Rth(j-a) = 20 K/W. (5) Rth(j-a) = 35 K/W.
Fig 9.
De-rating curves for power dissipation as a function of maximum ambient temperature
In the following example, a heatsink calculation is made for an 8 BTL application with a 35 V supply:
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
19 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
The audio signal has a crest factor of 10 (the ratio between peak power and average power (20 dB)), this means that the average output power is 110 of the peak power. In this case, the peak RMS output power level would be the 0.5 % THD level, i.e. 220 W. The average power would then be 110 x 220 W = 22 W. The dissipated power at an output power of 22 W is approximately 5 W. When the maximum expected ambient temperature is 85 C, the total Rth(j-a) would then ( 140 - 85 ) become ------------------------- = 11 K/W 5 Rth(j-a) = Rth(j-c) + Rth(c-h) + Rth(h-a) Rth(j-c) = 1.1 K/W Rth(c-h) = 0.5 K/W to 1 K/W (dependent on mounting) So the thermal resistance between heatsink and ambient temperature is: Rth(h-a) = 11 - (1.1 + 1) = 8.9 K/W The de-rating curves (given for several values of Rth(j-a)) are illustrated in Figure 9. A maximum junction temperature Tj = 150 C is taken into account. From Figure 9 the maximum allowable power dissipation for a given heatsink size can be derived or the required heatsink size can be determined at a required dissipation level.
13.7 Output current limiting
To guarantee the robustness of the TDA8950, the maximum output current that can be delivered by the output stage is limited. An advanced OverCurrent Protection (OCP) is included for each output power switch. When the current flowing through any of the power switches exceeds the defined internal threshold current of 9.2 A (e.g. in case of a short-circuit to the supply lines or a short-circuit across the load), the maximum output current of the amplifier will be regulated to 9.2 A. The TDA8950 amplifier can distinguish between a low-ohmic short-circuit condition and other over current conditions like dynamic impedance drops of the loudspeakers used. The impedance threshold (Zth) depends on the supply voltage used. Depending on the impedance of the short-circuit, the amplifier will react as follows:
* Short-circuit impedance > Zth: The maximum output current of the amplifier is
regulated to 9.2 A, but the amplifier will not shut-down its PWM outputs. Effectively this results in a clipping output signal across the load (behavior is very similar to voltage clipping).
* Short-circuit impedance < Zth: The amplifier will limit the maximum output current to
9.2 A and at the same time the capacitor on pin PROT is discharged. When the voltage across this capacitor drops below an internal threshold voltage, the amplifier will shutdown completely and an internal timer will be started. A typical value for the capacitor on pin PROT is 220 pF. After a fixed time of 100 ms the amplifier is switched on again. If the requested output current is still too high, the amplifier will switch-off again. Thus the amplifier will try to switch to the Operating mode every
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
20 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
100 ms. The average dissipation will be low in this situation because of this low duty cycle. If the over current condition is removed the amplifier will remain in Operating mode after being restarted. In this way the TDA8950 amplifier is fully protected against short-circuit conditions while at the same time so-called audio holes, as a result of loudspeaker impedance drops, are eliminated.
13.8 Pumping effects
In a typical stereo half-bridge SE application the TDA8950 is supplied by a symmetrical voltage (e.g. VDD = +35 V and VSS = -35 V). When the amplifier is used in an SE configuration, a `pumping effect' can occur. During one switching interval, energy is taken from one supply (e.g. VDD), while a part of that energy is returned to the other supply line (e.g. VSS) and vice versa. When the voltage supply source cannot sink energy, the voltage across the output capacitors of that voltage supply source will increase and the supply voltage is pumped to higher levels. The voltage increase caused by the pumping effect depends on:
* * * * *
Speaker impedance Supply voltage Audio signal frequency Value of decoupling capacitors on supply lines Source and sink currents of other channels
When applying the TDA8950, measures must be taken within the application to minimize the pumping effect and prevent malfunctions of either the audio amplifier and/or the voltage supply source. Amplifier malfunction due to the pumping effect can cause triggering of the UVP, OVP or UBP. The best remedy against pumping effects is to use the TDA8950 in a mono full-bridge application or, in the case of stereo half-bridge applications, adapt the power supply (e.g. increase supply decoupling capacitors).
13.9 Application schematics
Notes for the application schematic:
* A solid ground plane connected to VSS around the switching amplifier is necessary to
prevent emission.
* 100 nF capacitors must be placed as close as possible to the power supply pins of the
TDA8950.
* The internal heat spreader of the TDA8950 is internally connected to VSS. * The external heatsink must be connected to the ground plane. * Use a thermally conductive, electrically non-conductive, Sil-Pad between the backside
of the TDA8950 and a small external heatsink.
* The differential inputs enable the best system level audio performance with
unbalanced signal sources. In case of hum, due to floating inputs, connect the shielding or source ground to the amplifier ground. Jumpers J1 and J2 are open on set level and are closed on the stand-alone demo board.
* Minimum total required capacitance per power supply line is 3300 F.
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
21 of 39
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
Preliminary data sheet Rev. 01 -- 9 September 2008
(c) NXP B.V. 2008. All rights reserved. TDA8950_1
NXP Semiconductors
Rvdda 10
VDDA VDDP
VDDP
Cvddp 470 F Cvp 22 F
SINGLE ENDED OUTPUT FILTER VALUES LOAD Llc Clc mode control VDDP
Rosc 30 k Cvddp 100 nF
GND
Cvssp 470 F
VSSA VSSP
2-3 3-6 4-8 VSSP
Cvssp 100 nF Rsn 10
10 H 15 H 22 H
1000 nF 680 nF 470 nF
VSSP
Rvssa 10
Cvp 100 nF
VDDP
Csn 220 pF Csn 220 pF
VSSA OSC
VDDP1
n.c. n.c. n.c.
Cin 470 nF
+ IN1 -
IN1P
4 8
5
6
1
23
8
VSSP1 11
MODE
VSSP 10 OUT1 BOOT1 Cbo
15 nF
Llc Rzo 22
Cin 470 nF
IN1N
9
+
9
Clc
SGND
19
- Czo 100 nF
TDA8950J
15 BOOT2 Cbo
15 nF Llc
- IN2 +
Cin 470 nF Cin 470 nF
IN2P
22 14 OUT2
IN2N
21 20 VDDA 18 VSSA 12 STABI 7 PROT 17 VSSD 16 VDDP2 13 VSSP2
Rsn 10 Cvssp 100 nF
VDDP
Csn 220 pF Csn 220 pF Clc
Rzo 22
-
2 x 150 W class-D power amplifier
Czo + 100 nF
Cvdda 100 nF
Cvssa 100 nF Cstab 470 nF
Cprot 100 nF
Cvddp 100 nF
Cvp 100 nF
VSSP
TDA8950
VDDA
VSSA
VSSP
VSSA
VDDP
VSSP
001aai420
22 of 39
Fig 10. Simplified application diagram
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
13.10 Layout and grounding
To obtain a high-level system performance, certain grounding techniques are essential. The input reference grounds have to be tied with their respective source grounds and must have separate tracks from the power ground tracks. This will prevent the large (output) signal currents from interfering with the small AC input signals. The small-signal ground tracks should be physically located as far as possible from the power ground tracks. Supply and output tracks should be as wide as possible for delivering maximum output power.
R20, R21 ground
R19 FBGND
001aai421
Fig 11. Printed-circuit board layout (quasi-single-sided); components view
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
23 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
13.11 Curves measured in reference design
10 THD (%) 1
001aai422
(2)
10-1
(1)
10-2
(3)
10-3 10-2
10-1
1
10
102 Po (W)
103
VP = 35 V, 2 x 4 SE configuration. (1) OUT2, fi = 6 kHz (2) OUT2, fi = 1 kHz (3) OUT2, fi = 100 Hz
Fig 12. THD as a function of output power, SE configuration with 2 x 4 load
10 THD (%) 1
001aai700
10-1
(2)
(1)
10-2
(3)
10-3 10-2
10-1
1
10
102 Po (W)
103
VP = 35 V, 2 x 6 SE configuration. (1) OUT2, fi = 6 kHz (2) OUT2, fi = 1 kHz (3) OUT2, fi = 100 Hz
Fig 13. THD as a function of output power, SE configuration with 2 x 6 load
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
24 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
10 THD (%) 1
001aai423
10-1
(1)
(2)
10-2
(3)
10-3 10-2
10-1
1
10
102 PO (W)
103
VP = 35 V, fosc = 350 kHz, 1 x 8 BTL configuration. (1) fi = 6 kHz (2) fi = 1 kHz (3) fi = 100 Hz
Fig 14. THD as a function of output power, BTL configuration with 1 x 8 load
10 THD (%) 1
001aai424
10-1
(1)
10-2
(2)
10-3 10
102
103
104
fi (Hz)
105
VP = 35 V, 2 x 4 SE configuration. (1) OUT2, PO = 1 W (2) OUT2, PO = 10 W
Fig 15. THD as a function of frequency, SE configuration with 2 x 4 load
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
25 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
10 THD (%) 1
001aai701
10-1
(1)
10-2
(2)
10-3 10
102
103
104
fi (Hz)
105
VP = 35 V, 2 x 6 SE configuration. (1) OUT2, Po = 1 W (2) OUT2, Po = 10 W
Fig 16. THD as a function of frequency, SE configuration with 2 x 6 load
10 THD (%) 1
001aai702
10-1
10-2
(1) (2)
10-3 10
102
103
104
f (Hz)
105
VP = 35 V, 1 x 8 BTL configuration (1) Po = 1 W (2) Po = 10 W
Fig 17. THD as a function of frequency, BTL configuration with 1 x 8 load
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
26 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
0 cs (dB) -20
001aai703
-40
-60
-80
-100 10
102
103
104 f (Hz)
105
VP = 35 V, 2 x 4 SE configuration For OUT1 and OUT2 for both 1 W and 10 W.
Fig 18. Channel separation as a function of frequency, SE configuration with 2 x 4 load
0 cs (dB) -20
001aai704
-40
-60
-80
-100 10
102
103
104 f (Hz)
105
VP = 35 V, 2 x 6 SE configuration For OUT1 and OUT2 for both 1 W and 10 W.
Fig 19. Channel separation as a function of frequency, SE configuration with 2 x 6 load
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
27 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
P (W)
40 35 30 25
(1)
001aai705
20
(2)
15
(3)
10 5 0 0 20 40 60 80 100 Po (W) 120
VP = 35 V, fi = 1 kHz, fosc = 325 kHz (1) 2 x 4 SE configuration (2) 2 x 6 SE configuration (3) 2 x 8 SE configuration
Fig 20. Power dissipation as function of output power per channel
100 (%) 80
(1) (2)
001aai706
(3)
60
40
20
0 0 20 40 60 80 100 Po (W) 120
VP = 35 V, fi = 1 kHz, fosc = 325 kHz (1) 2 x 4 SE configuration (2) 2 x 6 SE configuration (3) 2 x 8 SE configuration
Fig 21. Efficiency as function of output power per channel
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
28 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
Po (W)
200 180 160 140 120 100
(2) (1)
001aai707
80 60 40 20 0 12.5 15 17.5 20 22.5 25 27.5 30 32.5 35 37.5 40 Vp (V)
(3) (4)
fi = 1 kHz, fosc = 325 kHz Note: infinite heat sink used. (1) THD = 10 %, 4 (2) THD = 0.5 %, 4 ; THD = 10 %, 6 (3) THD = 0.5 %, 6 ; THD = 10 %, 8 (4) THD = 0.5 %, 8
Fig 22. Output power as a function of supply voltage, SE configuration
Po (W)
350 300 250
(1)
001aai708
200
(2)
150
(3)
100 50 0 12.5
(4)
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5 40 Vp (V)
fi = 1 kHz, fosc = 325 kHz Note: infinite heat sink used. (1) THD = 10 %, 8 (2) THD = 0.5 %, 8 (3) THD = 10 %, 16 (4) THD = 0.5 %, 16
Fig 23. Output power as function of supply voltage, BTL configuration
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
29 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
45 Gv(cl) (dB) 40
(1)
001aai709
35
30
(2) (3) (4)
25
20 10
102
103
104 f (Hz)
105
VP = 35 V, Vi = 100 mV, Rs = 0 , Ci = 330 pF. (1) 1 x 8 BTL configuration (2) 2 x 4 SE configuration (3) 2 x 6 SE configuration (4) 2 x 8 SE configuration
Fig 24. Gain as function of frequency, Rs = 0 , Ci = 330 pF
-20 SVRR (dB) -40 -60
(1)
001aai710
-80
(2)
-100
-120 -140 10
(3)
102
103
104 fripple (Hz)
106
Ripple on VDD, short on input pins. VP = 35 V, RL = 4 , Vripple = 2 V (p-p). (1) OUT2, mute (2) OUT2, on (3) OUT2, standby
Fig 25. SVRR as function of ripple frequency
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
30 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
-20 SVRR (dB) -40 -60
001aai711
-80 -100
(2) (1)
-120 -140 10
(3)
102
103
104 fripple (Hz)
106
Ripple on VSS, short on input pins. VP = 35 V, RL = 4 , Vripple = 2 V (p-p). (1) OUT2, mute (2) OUT2, on (3) OUT2, standby
Fig 26. SVRR as function of ripple frequency
10 Vo (V) 1 0.1 0.01 0.001 0.0001
(1) (2)
001aai712
0.00001 0.000001 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VMODE (V)
VP = 35 V (1) Out1, down (2) Out1, up
Fig 27. Output voltage as function of mode voltage
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
31 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
-50 mute (dB) -60
001aai713
-70
(1) (2) (3)
-80
-90 10
102
103
104 f (Hz)
105
VP = 35 V, Vi = 2 V (rms), fosc = 325 kHz (1) OUT2, 8 (2) OUT2, 6 (3) OUT2, 4
Fig 28. Mute attenuation as function of frequency
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
32 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
14. Package outline
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1
non-concave x D Dh
Eh
view B: mounting base side A2
d
A5 A4
B j
E2 E
E1
L2 L1 L3
L 1 Z e e1 wM 23
Q m
c e2
vM
bp
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A 2 mm A4 A5 bp c D (1) d D h E (1) e e1 e2 Eh E1 E2 j L L1 L2 L3 m Q v w x
Z (1)
12.2 4.6 1.15 1.65 0.75 0.55 30.4 28.0 12 2.54 1.27 5.08 11.8 4.3 0.85 1.35 0.60 0.35 29.9 27.5
6 10.15 6.2 1.85 3.6 9.85 5.8 1.65 2.8
14 10.7 2.4 1.43 2.1 4.3 0.6 0.25 0.03 45 13 9.9 1.6 0.78 1.8
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT411-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION
ISSUE DATE 98-02-20 02-04-24
Fig 29. Package outline SOT411-1 (DBS23P)
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
33 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
E D x
A X
c y E2 HE vM A
D1 D2 1 pin 1 index Q A2 E1 A4 Lp detail X 24 Z e bp 13 wM (A3) A 12
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A2 max. 3.5 3.5 3.2 A3 0.35 A4(1) bp c D(2) D1 D2 1.1 0.9 E(2) 11.1 10.9 E1 6.2 5.8 E2 2.9 2.5 e 1 HE 14.5 13.9 Lp 1.1 0.8 Q 1.7 1.5 v w x y Z 2.7 2.2 8 0
+0.08 0.53 0.32 16.0 13.0 -0.04 0.40 0.23 15.8 12.6
0.25 0.25 0.03 0.07
Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT566-3 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION
ISSUE DATE 03-02-18 03-07-23
Fig 30. Package outline SOT566-3 (HSOP24)
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
34 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
15. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 "Surface mount reflow soldering description".
15.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization.
15.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following:
* Through-hole components * Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are:
* * * * * *
Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering
15.3 Wave soldering
Key characteristics in wave soldering are:
* Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are exposed to the wave
* Solder bath specifications, including temperature and impurities
TDA8950_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
35 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
15.4 Reflow soldering
Key characteristics in reflow soldering are:
* Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 31) than a SnPb process, thus reducing the process window
* Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
* Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 11 and 12
Table 11. SnPb eutectic process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 2.5 2.5 Table 12. 235 220 Lead-free process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 1.6 1.6 to 2.5 > 2.5 260 260 250 350 to 2000 260 250 245 > 2000 260 245 245 350 220 220
Package thickness (mm)
Package thickness (mm)
Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 31.
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
36 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
temperature
maximum peak temperature = MSL limit, damage level
minimum peak temperature = minimum soldering temperature
peak temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 31. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365 "Surface mount reflow soldering description".
16. Revision history
Table 13. Revision history Release date 20080909 Data sheet status Preliminary data sheet Change notice Supersedes Document ID TDA8950_1
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
37 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
17. Legal information
17.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
17.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
TDA8950_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 9 September 2008
38 of 39
NXP Semiconductors
TDA8950
2 x 150 W class-D power amplifier
19. Contents
General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 Functional description . . . . . . . . . . . . . . . . . . . 5 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulse width modulation frequency . . . . . . . . . . 8 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal protection . . . . . . . . . . . . . . . . . . . . . . 8 Thermal FoldBack (TFB) . . . . . . . . . . . . . . . . . 8 OverTemperature Protection (OTP) . . . . . . . . . 9 OverCurrent Protection (OCP) . . . . . . . . . . . . . 9 Window Protection (WP). . . . . . . . . . . . . . . . . 10 Supply voltage protections . . . . . . . . . . . . . . . 10 Differential audio inputs . . . . . . . . . . . . . . . . . 11 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 12 Thermal characteristics. . . . . . . . . . . . . . . . . . 12 Static characteristics. . . . . . . . . . . . . . . . . . . . 13 Dynamic characteristics . . . . . . . . . . . . . . . . . 14 Switching characteristics . . . . . . . . . . . . . . . . 14 Stereo and dual SE application characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 15 12.3 Mono BTL application characteristics . . . . . . . 16 13 Application information. . . . . . . . . . . . . . . . . . 17 13.1 Mono BTL application . . . . . . . . . . . . . . . . . . . 17 13.2 Pin MODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.3 Output power estimation. . . . . . . . . . . . . . . . . 17 13.3.1 SE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.3.2 Bridge-Tied Load (BTL) . . . . . . . . . . . . . . . . . 18 13.4 External clock . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.5 Noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 13.6 Heatsink requirements . . . . . . . . . . . . . . . . . . 19 13.7 Output current limiting. . . . . . . . . . . . . . . . . . . 20 13.8 Pumping effects . . . . . . . . . . . . . . . . . . . . . . . 21 13.9 Application schematics . . . . . . . . . . . . . . . . . . 21 13.10 Layout and grounding . . . . . . . . . . . . . . . . . . . 23 13.11 Curves measured in reference design . . . . . . 24 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 33 15 Soldering of SMD packages . . . . . . . . . . . . . . 35 15.1 Introduction to soldering . . . . . . . . . . . . . . . . . 35 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.3.1 8.3.1.1 8.3.1.2 8.3.2 8.3.3 8.3.4 8.4 9 10 11 12 12.1 12.2 15.2 15.3 15.4 16 17 17.1 17.2 17.3 17.4 18 19 Wave and reflow soldering . . . . . . . . . . . . . . . Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 35 36 37 38 38 38 38 38 38 39
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 September 2008 Document identifier: TDA8950_1


▲Up To Search▲   

 
Price & Availability of TDA8950

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X